New Technology for High Performance Electronic Application developed by DMSRDE

[TimeToScoot]

Defence Materials and Stores Research and Development Establishment (DMSRDE), Kanpur, a pioneer establishment in indigenisation and development of strategic non-metallic materials and technologies, in collaboration with Central Glass and Ceramics Research Institute (CGCRI), Kolkata, has recently developed a new technology to deposit Silicon Carbide (SiC) thin fi lms for high temperature electronic applications using molecularly engineered liquid polycarbosilane of high vapour pressure by Chemical Vapour Deposition (CVD) method. Glancing angle X-ray diffractometer and Fourier Transform Infrared Spectroscopy reveal smooth β-SiC coating and its subsequent transformation into α-SiC on silicon substrate. The fi lm was found uniform with a thickness ranging from 0.6 to 1.2 μm at different temperatures. The average particle size, as seen from the Field Emission Scanning Electron Microscopy,ranges from 7 to 385 nm approximately; the lowest range being 7-20 nm, which hitherto has not yet been reported using LPCS as SiC precursor. The coated samples also showed substantial increment of hardness (~ 18.8 GPa) and toughness (~ 1.51 MPa m1/2) both of which increases with increase in deposition temperature. The smooth and thin SiC coating on silicon formed in three different moderate temperatures compared to very high temperature for other CVD assisted coating. Enhanced hardness and toughness makes LPCS generated SiC coating a promising material in critically harsh environment required for microelectromechanical systems (MEMS) application. A novel rectifying interface material, using carbon rich crystalline (C)-SiC and n-type Si by a modifi ed CVD technique using liquid polycarbosilane, as a precursor at 900 °C has also been developed.

http://www.drdo.gov.in/drdo/pub/newsletter/2014/may_14.pdf

 

[mandrom]

Computer chips ??