China IC firm sets milestone with rollout of 3D NAND flash

[Bussard Ramjet]

China IC firm sets milestone with rollout of 3D NAND flash



http://www.digitimes.com/news/a20171115PD207.html

@cirr @cnleio @JSCh et al

Congratulations!

The trial production is scheduled for second quarter next year. I would expect full scale mass production to take at least 2-3 more quarters, if everything goes right.

 

[cirr]

China IC firm sets milestone with rollout of 3D NAND flash



http://www.digitimes.com/news/a20171115PD207.html

@cirr @cnleio @JSCh et al

Congratulations!

The trial production is scheduled for second quarter next year. I would expect full scale mass production to take at least 2-3 more quarters, if everything goes right.

Old news which has been reported by Chinese media for months

For example: http://www.esmchina.com/news/article/201709281806

Since you claim to be knowledgeable about Chinese semiconductor industry, perhaps you would care to give us an overview of Chinese semiconductor equipment and materials sectors.

 

[dy1022]

what about Supa Powan 2012 already ???

much better than China or not?

 

[Bussard Ramjet]

Old news which has been reported by Chinese media for months

For example: http://www.esmchina.com/news/article/201709281806

No it is not. Those news are about plans, and expectations etc. which are always uncertain.

For example, SMIC (China's largest foundry) doesn't have a very good track record of making reasonable predictions.

This news is about what has been done.

The technology has successfully been created, and the trial production will begin in second quarter 2018.

 

[cirr]

No it is not. Those news are about plans, and expectations etc. which are always uncertain.

For example, SMIC (China's largest foundry) doesn't have a very good track record of making reasonable predictions.

This news is about what has been done.

The technology has successfully been created, and the trial production will begin in second quarter 2018.

You are advised to read

http://www.esmchina.com/news/article/201709281806

before making grand and sweeping remarks.

By the way, the successful development of 32-layer 3D NAND flash chips was first reported on 16/02/2017:

http://tech.163.com/17/0216/10/CDCVTQE600097U7T.html

If you can't read Chinese, you should learn to keep your mouth shut.

 

[大汉奸柳传志]

I probably am one of the most knowledgeable persons on Chinese semiconductor industry, and yet remain banned from the thread.

you got banned for such exact attitude, maybe?

 

[lonelyman]

China IC firm sets milestone with rollout of 3D NAND flash



http://www.digitimes.com/news/a20171115PD207.html

@cirr @cnleio @JSCh et al

Congratulations!

The trial production is scheduled for second quarter next year. I would expect full scale mass production to take at least 2-3 more quarters, if everything goes right.

The price will come down, finally

 

[cirr]

China IC firm sets milestone with rollout of 3D NAND flash



http://www.digitimes.com/news/a20171115PD207.html

@cirr @cnleio @JSCh et al

Congratulations!

The trial production is scheduled for second quarter next year. I would expect full scale mass production to take at least 2-3 more quarters, if everything goes right.

Hey, knowledgeable guy

新型相变材料突破存储速度极限 数据读写从数十纳秒提升到亚纳秒

2017-11-16

关键字:《科学》杂志相变存储器存储器存储性能存储速速存储速度极限

据《科技日报》15日消息，《科学》杂志官网14日报道，中国科学院上海微系统与信息技术研究所副研究员饶峰和同事研发出一种全新的相变材料——钪锑碲合金，可在不到1纳秒内实现多晶态与玻璃态两种相态之间的转换。发表在本周出版的《科学》杂志上的这一研究成果，突破了相变存储器（PCRAM）的存储速度极限，为实现我国自主通用存储器技术奠定了基础。

模拟显示了在600皮秒（0.6纳秒）内的晶核扩展，新相变材料迅速实现多晶态与玻璃态两种相态之间的转换。

图片来自《科学》杂志官网

经过几十年的发展，计算机已经变得更小、更快、更便宜，存储性能继续提升所面临的挑战也更加严峻。

静态/动态随机存储器（SRAM缓存/DRAM内存）是与计算机中央处理器直接交换数据的临时存储媒介，可按需随意取出或存入数据。本世纪初，科学家就已经提出PCRAM是一种很有前途的新型非易失性存储器，通过在两种相态之间转换，分别代表“0”和“1”进行存储。

现有最普遍使用的相变材料是锗锑碲合金（GST），为符合当今计算机的高速随机存储的需求，相态转换必须在亚10纳秒内完成，而锗锑碲合金的相变速度通常需要几十至几百纳秒，太慢导致无法媲美或替代传统的DRAM和SRAM存储器。

饶峰和同事通过理论计算，向锑碲合金加入过渡族金属，筛选出能在更高温度下通过形成更加稳定的钪碲化学键加速晶核形成的钪锑碲合金。

他们还合成出这一新型相变材料，并通过实验证明，新材料能在700皮秒（0.7纳秒）内快速完成晶体与玻璃态的相变可逆转换。研究人员表示，这一速度提升，使得相变存储器有望替代现有高速存储器进入实用，未来将进一步助推计算机整体性能的大幅提升，向更快速、更低功耗、更长寿命方向发展。

http://www.guancha.cn/industry-science/2017_11_16_435050.shtml